HMS-7000


Flagship Fully Automated Measurement System

 

1. High Precision & Reproducibility

  • Built-in low-noise electronics and a highly stable Hall measurement core ensure accurate and repeatable results.
  • Supports the Photonic Hall Effect Module, enabling optical-excitation carrier analysis for photoelectric materials.

2. Fully Automated Hall Measurement
  • Motorized magnetic field switching and an automated measurement workflow provide intuitive operation with no manual intervention required.


3. Wide Temperature Measurement Range
  • Supports measurements from room temperature up to 350 K.
  • The modular sample stage can be configured with heating/cooling options and includes a temperature sensor to ensure stable measurements.

4. Advanced Sample Handling

  • Modular sample kits (e.g., SH80350R) include a magnetic cap, built-in heater, sliding rod, and liquid-nitrogen reservoir, enabling quick switching between samples and temperature configurations.

5. Comprehensive Electrical Analysis

  • Automatically measures carrier concentration, mobility, resistivity, conductivity, Hall coefficient, magnetoresistance, and Alpha ratio, with real-time I-V / I-R curve plotting.
A research-grade Hall effect measurement system with Photonic Hall Effect capability. Measures carrier concentration, mobility, resistivity, and Hall coefficient under RGB light illumination, ideal for solar cells, optical sensors, and advanced semiconductors.
  • Main unit dimensions: 

          main body 440×420×140 mm (W×H×D) / Weight : 8.5 kg

          magnet kit 700×220×280 mm (W×H×D) / Weight : 15.5 kg

  • DC input current range: 1 nA to 20 mA.

  • Measurable resistivity: 10⁻⁴ to 10-7 Ω·cm.

  • Measurable carrier concentration: approximately 10⁷ to 10²¹ /cm3.

  • Measurable mobility: approximately 1 to 10⁷ cm²/V·s.

It is good to measure Solar cell, Optical sensor and etc. And, furthermore, it is also good to measure below samples.  
Si, SiGe, SiC, GaAs, InGaAs, InP, GaN, TCO(including ITO), AlZnO, FeCdTe, ZnO, etc., all of semiconductors can be measured (N/P-type)

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